DocumentCode
3013049
Title
Performance analysis of CNFET based circuits in the presence of fabrication imperfections
Author
Chrzanowska-Jeske, Malgorzata ; Ashraf, Rehman ; Nain, Rajeev K. ; Narendra, Siva G.
Author_Institution
Department of Electrical and Computer Engineering, Portland State University, OR, USA
fYear
2012
fDate
20-23 May 2012
Firstpage
1363
Lastpage
1366
Abstract
This paper presents a comprehensive analysis of the impact of CNT fabrication imperfections on the performance of multichannel Carbon Nanotube FET (CNFET) -based devices. In particular, we introduce a methodology for stochastically estimating the impact of spacing between adjacent tubes and the impact of its variation. This enables accurate prediction of the reduction in drive current due to the removal of tubes, the increase in spacing between adjacent tubes, and variations in tube diameter and spacing. In multichannel CNFETs, when the number of channels (CNTs) is greater than eight, our experiments show that variations in tube diameter and inter-tube spacing result in less than 8% performance variation. Monte Carlo simulation results, however, show that the removal of tubes increases variation in ION from 13% to 26% due to larger variation in inter-tube spacing. The presented realistic analysis and the proposed methodology can be extremely useful in variation-tolerant CNFET-based circuit design.
Keywords
CNTFETs; Carbon nanotubes; Electron tubes; Fabrication; Logic gates; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location
Seoul, Korea (South)
ISSN
0271-4302
Print_ISBN
978-1-4673-0218-0
Type
conf
DOI
10.1109/ISCAS.2012.6271495
Filename
6271495
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