• DocumentCode
    3013212
  • Title

    A new memristor based on NiTi smart alloys

  • Author

    Kyriakides, Evripides ; Hadjistassou, Constantinos ; Georgiou, Julius

  • Author_Institution
    Department of Electrical and Computer Engineering, University of Cyprus, Nicosia 1678, Cyprus
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    1403
  • Lastpage
    1406
  • Abstract
    With the recent discovery of the memristor, and following the initial realization based on titanium dioxide (TiO2), a plethora of potential device implementations have emerged. In this paper we present a novel memristive device based on a nickel titanium (NiTi) smart alloy. The proposed memristors are very practical in that it is possible to add a smart metal layer on an existing semiconductor process with very few extra masks. By patterning different widths and lengths of these memristors, the designer can affect the properties of the memristor. Unlike memristors designed for memory storage applications, these devices can return to their original state over shorter time scales, thus lending themselves to dynamic neural processes, which are key components required for future biomimetic computer architectures.
  • Keywords
    Atmospheric modeling; Computational modeling; Mathematical model; Memristors; Metals; Temperature measurement; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
  • Conference_Location
    Seoul, Korea (South)
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-0218-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2012.6271506
  • Filename
    6271506