DocumentCode :
3013444
Title :
Effects of stray inductance on switching transients of an IGBT propulsion inverter and resulting gate control strategies
Author :
Fasching, Martin
Author_Institution :
Siemens AG, Wien, Austria
Volume :
1
fYear :
1996
fDate :
24-27 Sep 1996
Firstpage :
467
Abstract :
A 720 kVA transistor-based inverter unit for local transportation systems is described. The discussion is focused on the stray inductance of the commutation circuit (Lσ), the switching transients and a novel gate control strategy which limits transient overvoltages due to Lσ. A simple measurement of Lσ is introduced. Based on switching transients, Lσ can be calculated with a standard deviation of 4%. A closed loop control of the IGBT gates uses the collector emitter voltage as a feedback signal and adjusts the turn-off speed according to the inverter´s point of operation. This guarantees an energy optimal turn-off transient without danger of transient overvoltage. Even under short circuit condition remains below a preset value
Keywords :
DC-AC power convertors; bipolar transistor switches; inductance; insulated gate bipolar transistors; invertors; power bipolar transistors; power semiconductor switches; power system transients; switching circuits; transportation; 720 kVA; IGBT propulsion inverter; closed loop control; collector emitter voltage; commutation circuit; feedback signal; gate control strategies; local transportation systems; stray inductance; switching transients; transient overvoltages limitation; turn-off speed; Capacitors; Costs; Inductance measurement; Insulated gate bipolar transistors; Inverters; Power semiconductor switches; Propulsion; Surges; Switching circuits; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
AFRICON, 1996., IEEE AFRICON 4th
Conference_Location :
Stellenbosch
Print_ISBN :
0-7803-3019-6
Type :
conf
DOI :
10.1109/AFRCON.1996.563158
Filename :
563158
Link To Document :
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