DocumentCode
3013457
Title
Ultralow energy, integrated GeSi electroabsorption modulators on SOI
Author
Liu, Jifeng ; Beals, Mark ; Pomerene, Andrew ; Bernardis, Sarah ; Sun, Rong ; Cheng, Jing ; Kimerling, Lionel C. ; Michel, Jurgen
Author_Institution
Microphotonics Center, Massachusetts Inst. of Technol., Cambridge, MA
fYear
2008
fDate
17-19 Sept. 2008
Firstpage
10
Lastpage
12
Abstract
We report a waveguide-integrated, gigahertz GeSi electroabsorption modulator on SOI with a 10 dB extinction ratio at 1540 nm, a ultralow energy consumption of 50 fJ/bit, and an operation spectrum range of 1539-1553 nm.
Keywords
Ge-Si alloys; electro-optical modulation; integrated optics; optical waveguides; semiconductor materials; GeSi; extinction ratio; gigahertz electroabsorption modulator; operation spectrum; ultralow energy consumption; waveguide-integrated modulator; wavelength 1539 nm to 1553 nm; CMOS process; Crystallization; Energy consumption; Extinction ratio; Germanium silicon alloys; Optical devices; Optical modulation; Optical waveguides; Silicon germanium; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location
Cardiff, Wales
Print_ISBN
978-1-4244-1769-8
Electronic_ISBN
978-1-4244-1768-1
Type
conf
DOI
10.1109/GROUP4.2008.4638079
Filename
4638079
Link To Document