Title :
Low driving-voltage optical modulator based on carrier depletion in silicon with periodically interleaved P-N junctions
Author :
Li, Z.Y. ; Xu, D.X. ; Mckinnon, R. ; Janz, S. ; Schmid, J.H. ; Lapointe, J. ; Cheben, P. ; Yu, J.Z.
Author_Institution :
IMS-NRC, Ottawa, ON
Abstract :
We present the novel design of a silicon modulator with low operation voltage of les3 V by employing periodically interleaved pn junctions. Simulations predict that in depletion mode it has a high modulation efficiency of better than 1.5 Vldrcm.
Keywords :
electro-optical modulation; elemental semiconductors; optical planar waveguides; silicon; Si; carrier depletion; optical modulator; periodically interleaved p-n junctions; silicon modulator; Doping; Electrooptic modulators; Low voltage; Optical modulation; Optical propagation; Optical transmitters; Optical waveguides; P-n junctions; Silicon; Waveguide junctions; Electro-optic modulator; carrier depletion; periodic doping; silicon photonics;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638080
