Title :
Towards a Ge-based laser for CMOS applications
Author :
Liu, Jifeng ; Sun, Xiaochen ; Becla, Piotr ; Kimerling, Lionel C. ; Michel, Jurgen
Author_Institution :
Microphotonics Center, Massachusetts Inst. of Technol., Cambridge, MA
Abstract :
We report experimental observation of direct band gap photoluminescence (PL) and optical bleaching of band-engineered epitaxial Ge-on-Si at room temperature, confirming that this material is a promising candidate for efficient light emitting devices on Si.
Keywords :
elemental semiconductors; germanium; optical saturable absorption; photoluminescence; semiconductor epitaxial layers; silicon; Ge-Si; Ge-based laser; direct band gap photoluminescence; light emitting devices; optical bleaching; Bleaching; Laser applications; Optical materials; Optical pumping; Photoluminescence; Photonic band gap; Semiconductor process modeling; Stimulated emission; Temperature; Tensile strain;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638081
