SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD

Author

Isella, G. ; Matmon, G. ; Neels, A. ; Muller, E. ; Califano, M. ; Chrastina, D. ; von Kanel, H. ; Lever, L. ; Ikoni, Z. ; Kelsal, R.W. ; Paul, D.J.

Author_Institution

Dip. di Fis., CNISM & L-NESS, Como

fYear

2008

fDate

17-19 Sept. 2008

Firstpage

29

Lastpage

31

Abstract

Si_0.5Ge_0.5/Si quantum cascade structures have been deposited by low-energy plasma-enhanced CVD according to a bound-to-continuum design and characterized by high resolution x-ray diffraction and transmission electron microscopy. Electroluminescence from the active region is peaked around 2.5 THz (~10 meV) and exhibits Stark shift and polarization dependence.

Keywords

Ge-Si alloys; Stark effect; X-ray diffraction; electroluminescence; elemental semiconductors; light polarisation; plasma CVD; semiconductor growth; semiconductor materials; semiconductor quantum wells; silicon; transmission electron microscopy; Si_0.5Ge_0.5-Si; Stark shift; bound-to-continuum design; electroluminescence; high resolution X-ray diffraction; low-energy plasma-enhanced CVD; polarization dependence; quantum cascade structures; transmission electron microscopy; Electrons; Germanium silicon alloys; III-V semiconductor materials; Laboratories; Plasma applications; Quantum cascade lasers; Semiconductor process modeling; Silicon germanium; Substrates; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2008 5th IEEE International Conference on

Conference_Location

Cardiff, Wales

Print_ISBN

978-1-4244-1769-8

Electronic_ISBN

978-1-4244-1768-1

Type

conf

DOI

10.1109/GROUP4.2008.4638086

Filename

4638086