Title :
Visible to infrared light emission from reverse defect engineered silicon junctions
Author :
Morschbach, M. ; Oehme, M. ; Werner, J. ; Kasper, E.
Author_Institution :
Inst. of Semicond. Eng., Univ. Stuttgart, Stuttgart
Abstract :
Experimental results of light emission by defect engineered silicon pn-junctions, operated at room temperature under reverse bias, are presented. The devices emit light from the visible up to the infrared. As will be shown the emission is enhanced by the usage of a defect engineered layer structure. For the present research an improvement up to 280% in efficiency is observed. Defect engineered layers also provide a highly focused light emission - emission spots of app. 1 mum in diameter are observable. The data of two different defect engineered samples will be compared with a defect free reference to show the advantages of defect engineered layers.
Keywords :
crystal defects; elemental semiconductors; light emitting diodes; p-n junctions; silicon; Si; light emitting diode; p-n junction; reverse defect engineered silicon junction; temperature 293 K to 298 K; visible-infrared light emission; Data engineering; Germanium silicon alloys; High speed optical techniques; Integrated optics; Light emitting diodes; Molecular beam epitaxial growth; Optical surface waves; Semiconductor diodes; Silicon germanium; Temperature; SiGe; defect engineering; light-emitting diodes; quantum well; silicon;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638087
