Silicon nanocrystals in silicon nitride structures: Towards efficient light emission under optical and electrical pumping

In this paper, we will discuss light emission, Er sensitization and electroluminescence from small (2 nm-diameter) Si nanoclusters embedded in silicon nitride/Si superlattice structures fabricated by direct co-sputtering on Si substrates. In particular, we will show efficient Er emission sensitization via controllable non-radiative energy transfer and we will demonstrate enhanced electroluminescence from superlattice-based electrical devices. Our results demonstrate that small Si clusters embedded in silicon nitride-based matrices provide alternative routes towards the fabrication of Si-compatible optical devices based on Er sensitization.