• DocumentCode
    3013656
  • Title

    Light emitting transistors using silicon quantum dots in an organic matrix

  • Author

    Aggarwal, Gagan ; Pi, Xiaodong ; Lu, Stephen A Campbellan P ; Ramirez, Ayax D. ; Kortshagen, Uwe ; Campbell, Stephen A.

  • Author_Institution
    EeE Dept., Univ. of Minnesota, Minneapolis, MN
  • fYear
    2008
  • fDate
    17-19 Sept. 2008
  • Firstpage
    43
  • Lastpage
    45
  • Abstract
    Junction field effect light emitting transistors (JFELET) were fabricated using silicon quantum dots in a conducting polymer matrix. The quantum dots with photoluminescence emission centered at 650 nm were used. I-V and light emission characteristics for typical light emitting transistors are presented.
  • Keywords
    elemental semiconductors; junction gate field effect transistors; light emitting devices; photoluminescence; semiconductor quantum dots; silicon; I-V characteristics; Si; conducting polymer matrix; junction field effect light emitting transistors; light emission characteristics; photoluminescence emission; silicon quantum dots; wavelength 650 nm; Active matrix organic light emitting diodes; Aluminum; Costs; Electrodes; Indium tin oxide; Nanoparticles; Plasma devices; Polymers; Quantum dots; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2008 5th IEEE International Conference on
  • Conference_Location
    Cardiff
  • Print_ISBN
    978-1-4244-1769-8
  • Electronic_ISBN
    978-1-4244-1768-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2008.4638091
  • Filename
    4638091
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3013656