DocumentCode
3013688
Title
Silicon LEDs with antifuse injection
Author
Piccolo, Giulia ; Hoang, Tu ; Holleman, Jisk ; Kovalgin, Alexey Y. ; Schmitz, Jurriaan
Author_Institution
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede
fYear
2008
fDate
17-19 Sept. 2008
Firstpage
49
Lastpage
51
Abstract
A novel carrier-confinement structure is proposed and realized to generate light in a silicon diode. A significant enhancement of the external power efficiency is observed compared to reference silicon diodes on SOI.
Keywords
elemental semiconductors; light emitting diodes; silicon; Si; antifuse injection; external power efficiency; Carrier confinement; Charge carrier processes; Conductivity; Dry etching; Electrodes; Light emitting diodes; P-i-n diodes; Radiative recombination; Silicon; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location
Cardiff
Print_ISBN
978-1-4244-1769-8
Electronic_ISBN
978-1-4244-1768-1
Type
conf
DOI
10.1109/GROUP4.2008.4638093
Filename
4638093
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