DocumentCode :
3013688
Title :
Silicon LEDs with antifuse injection
Author :
Piccolo, Giulia ; Hoang, Tu ; Holleman, Jisk ; Kovalgin, Alexey Y. ; Schmitz, Jurriaan
Author_Institution :
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede
fYear :
2008
fDate :
17-19 Sept. 2008
Firstpage :
49
Lastpage :
51
Abstract :
A novel carrier-confinement structure is proposed and realized to generate light in a silicon diode. A significant enhancement of the external power efficiency is observed compared to reference silicon diodes on SOI.
Keywords :
elemental semiconductors; light emitting diodes; silicon; Si; antifuse injection; external power efficiency; Carrier confinement; Charge carrier processes; Conductivity; Dry etching; Electrodes; Light emitting diodes; P-i-n diodes; Radiative recombination; Silicon; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
Type :
conf
DOI :
10.1109/GROUP4.2008.4638093
Filename :
4638093
Link To Document :
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