Title :
An accurate quasi-saturation BJT model for very-high-frequency analog/digital applications
Author :
Fuse, T. ; Shuto, Y. ; Oowaki, Y.
Author_Institution :
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
An accurate quasi-saturation BJT model is proposed for very-high-frequency analog and digital applications. In modern low-power analog and digital circuits, the BJT often operates in a low collector voltage and high collector current region. Under such a quasi-saturation condition, base and collector resistances have nonlinear characteristics and the base pushout phenomenon occurs. However, these phenomena are not taken into the conventional small-signal model accurately, so that the collector current, the small-signal input impedance, and the small-signal current gain are overestimated under the quasi-saturation condition. We have developed linearized base and collector resistance models and the physically based base pushout model for accurate circuit simulations.
Keywords :
bipolar analogue integrated circuits; bipolar digital integrated circuits; bipolar transistors; circuit analysis computing; equivalent circuits; integrated circuit design; semiconductor device models; base pushout phenomenon; base resistances; circuit simulations; collector resistances; high collector current; low collector voltage; nonlinear characteristics; quasi-saturation BJT model; quasi-saturation condition; small-signal current gain; small-signal input impedance; very-high-frequency analog/digital applications; Circuit simulation; Conductivity; Contact resistance; Equivalent circuits; Frequency; Impedance; Laboratories; Thermal resistance; Ultra large scale integration; Voltage;
Conference_Titel :
VLSI Circuits, 1995. Digest of Technical Papers., 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7800-2599-0
DOI :
10.1109/VLSIC.1995.520715