Title :
InGaAs/GaAs QD-based 100 nm Bandwidth Electro Optic Modulator for 1.55 μm Applications
Author :
Moreau, G. ; Martinez, A. ; Merghem, K. ; Miard, A. ; Lemaître, A. ; Voisin, P. ; Ramdane, A.
Author_Institution :
CNRS UPR, Marcoussis
Abstract :
We demonstrate the potential of InGaAs/GaAs quantum dot-based electro-optic modulator for broadband (>100nm) applications at 1.55 mum.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; optical materials; optical waveguide components; semiconductor quantum dots; InGaAs-GaAs; electro-optic modulator; semiconductor QD; waveguide modulator; wavelength 1.55 mum; Bandwidth; Electrooptic modulators; Gallium arsenide; Indium gallium arsenide; Optical modulation; Optical waveguides; Phase measurement; Quantum dot lasers; Voltage; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453090
