Extended cavity lasers fabricated using photo-absorption induced disordering

Author

McKee, A. ; Lullo, G. ; McLean, C.J. ; Qiu, B.C. ; Bryce, A.C. ; De La Rue, R.M. ; Marsh, J.H.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1997

fDate

11-15 May 1997

Firstpage

288

Lastpage

291

Abstract

Photo-absorption induced disordering (PAID) has emerged as a laser induced quantum well intermixing technique of particular applicability to the GaInAsP/InP material system. Blue shifts in the bandgap of >100 meV in standard MQW laser structures are typically obtainable. The spatial selectivity of the technique is, however, limited by lateral heat flow. Here we show that extended cavity lasers can be fabricated by the PAID process, provided the graded interface region is pumped. The PAID process is modelled, and the ultimate spatial resolution is deduced

Keywords

III-V semiconductors; energy gap; gallium arsenide; gradient index optics; indium compounds; laser beam effects; laser cavity resonators; optical fabrication; quantum well lasers; spectral line shift; GaInAsP-InP; III-V semiconductors; extended cavity lasers; laser induced quantum well intermixing technique; photoabsorption induced disordering; pumped graded interface region; spatial resolution; Indium phosphide; Laser modes; Laser tuning; Optical materials; Optical waveguides; Photonic band gap; Pump lasers; Quantum well devices; Quantum well lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600130

Filename

600130