Monolithic integration of the III/V laser material Ga(NAsP) lattice-matched on (001) Silicon substrate

Author

Kunert, B. ; Németh, I. ; Zinnkann, S. ; Fritz, R. ; Lukin, G. ; Volz, K. ; Stolz, W.

Author_Institution

NAsPim/v GmbH Marburg Mater. Sci. Center & Fac. of Phys., Philipps Univ. Marburg, Marburg

fYear

2008

fDate

17-19 Sept. 2008

Firstpage

73

Lastpage

75

Abstract

Multi quantum well (MQW) heterostructures in the GaP-based dilute nitride Ga(NAsP) were pseudomorphically grown on exact oriented (001) Silicon substrates without the formation of misfit dislocations. Efficient room temperature photoluminescence has been observed.

Keywords

III-V semiconductors; dislocations; gallium arsenide; gallium compounds; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; Ga(NAsP); III-V laser material; Si; dilute nitride; exact oriented silicon substrates; misfit dislocations; monolithic integration; multiquantum well heterostructures; room temperature photoluminescence; temperature 293 K to 298 K; Delay; Epitaxial growth; Integrated circuit interconnections; Integrated circuit technology; Lattices; Monolithic integrated circuits; Optical materials; Semiconductor materials; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2008 5th IEEE International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1769-8

Electronic_ISBN

978-1-4244-1768-1

Type

conf

DOI

10.1109/GROUP4.2008.4638101

Filename

4638101