Intraband radiative and nonradiative transitions of carriers confined in Si nanocrystals

Author

Poddubny, A.N. ; Prokofiev, A.A. ; Moskalenko, A.S. ; Goupalov, S.V. ; Yassievich, I.N.

Author_Institution

A.F. Ioffe Physico Tech. Inst., St. Petersburg

fYear

2008

fDate

17-19 Sept. 2008

Firstpage

79

Lastpage

81

Abstract

Rates of spontaneous optical intraband transitions are determined. Huang-Rhys factor controlling the hole relaxation is calculated. The rate of hole relaxation due to the emission of multiple optical phonons is estimated. A new mechanism of electron nonradiative relaxation is proposed. This work was supported by RFBR and the ldquoDynastyrdquo Foundation - ICFPM.

Keywords

carrier relaxation time; elemental semiconductors; nanostructured materials; semiconductor quantum dots; silicon; silicon compounds; tight-binding calculations; Si nanocrystals; Si-SiO₂; intraband carriers relaxation; intraband nonradiative transitions; intraband radiative transitions; silicon oxide matrix; silicon quantum dots; tight-binding model; Carrier confinement; Charge carrier processes; Effective mass; Electrons; Energy states; Nanocrystals; Phonons; Quantum dots; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2008 5th IEEE International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1769-8

Electronic_ISBN

978-1-4244-1768-1

Type

conf

DOI

10.1109/GROUP4.2008.4638103

Filename

4638103