Title :
Intraband radiative and nonradiative transitions of carriers confined in Si nanocrystals
Author :
Poddubny, A.N. ; Prokofiev, A.A. ; Moskalenko, A.S. ; Goupalov, S.V. ; Yassievich, I.N.
Author_Institution :
A.F. Ioffe Physico Tech. Inst., St. Petersburg
Abstract :
Rates of spontaneous optical intraband transitions are determined. Huang-Rhys factor controlling the hole relaxation is calculated. The rate of hole relaxation due to the emission of multiple optical phonons is estimated. A new mechanism of electron nonradiative relaxation is proposed. This work was supported by RFBR and the ldquoDynastyrdquo Foundation - ICFPM.
Keywords :
carrier relaxation time; elemental semiconductors; nanostructured materials; semiconductor quantum dots; silicon; silicon compounds; tight-binding calculations; Si nanocrystals; Si-SiO2; intraband carriers relaxation; intraband nonradiative transitions; intraband radiative transitions; silicon oxide matrix; silicon quantum dots; tight-binding model; Carrier confinement; Charge carrier processes; Effective mass; Electrons; Energy states; Nanocrystals; Phonons; Quantum dots; Silicon; Stimulated emission;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638103
