Title :
Metal-semiconductor-metal Ge photodetectors on SOI substrates for near infrared wavelength operation
Author :
Cheng Li ; Zhou, Zhiwen ; Cai, Zhimeng ; Lai, Hongkai ; Chen, Songyan
Author_Institution :
Dept. of Phys., Xiamen Univ., Xiamen
Abstract :
Metal-semiconductor-metal Ge photodetectors on SOI substrates operating at 1.3-1.6 mum have been demonstrated. Ge films with thin top silicon layer for suppressing dark current were grown on low-temperature buffers by ultra-high vacuum chemical vapor deposition.
Keywords :
chemical vapour deposition; elemental semiconductors; germanium; metal-semiconductor-metal structures; photodetectors; Ge; near infrared wavelength operation; photodetectors; ultra-high vacuum chemical vapor deposition; wavelength 1.3 micron to 1.6 micron; Chemical vapor deposition; Dark current; Germanium silicon alloys; Photoconductivity; Photodetectors; Schottky barriers; Silicon germanium; Silicon on insulator technology; Substrates; Voltage;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638106
