Title :
Influence of Si crystallization evolution on the Er luminescence in superlattices Er:Si /Al2O3
Author :
Wang, J.Z. ; Shi, Y. ; Shi, Z.Q. ; Tao, Z.S. ; Zhang, X.L. ; Pu, L. ; Ma, E. ; Zhang, R. ; Zheng, Y.D. ; Lu, F.
Author_Institution :
Dept. of Phys., Nanjing Univ., Nanjing
Abstract :
Er:Si/Al2O3 superlattices are fabricated by pulsed laser deposition (PLD) technique. Photoluminescence (PL) and PL excitation spectra measurements are carried out. The annealing temperature dependent PL intensity curves are presented. The influence of Si crystallization on the Er ions luminescence shows that the thinner the Si layer, and the shorter the distance r, the better its sensitizing performance.
Keywords :
alumina; annealing; crystallisation; elemental semiconductors; erbium; photoluminescence; pulsed laser deposition; silicon; superlattices; Si:Er-Al2O3; annealing temperature; crystallization; intensity curves; photoluminescence excitation spectra; pulsed laser deposition; sensitizing performance; superlattices; Annealing; Crystallization; Erbium; Laser excitation; Luminescence; Optical pulses; Photoluminescence; Pulsed laser deposition; Superlattices; Temperature dependence;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638115
