Comparision of InGaAs absorptive grating structures in 1.55 μm InGaAsP/InP strained MQW gain-coupled DFB lasers

Author

Funabashi, Masaki ; Kawanishi, Hidekazu ; Sudoh, Tsurugi K. ; Nakura, Toru ; Schmitz, Dietmar ; Schulte, Frank ; Nakano, Yoshiaki ; Tada, Kunio

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

292

Lastpage

295

Abstract

In gain-coupled (GC) distributed-feedback (DFB) lasers of absorptive grating type, the device characteristics depend very much on the absorptive grating configuration such as duty cycle, layer thickness, conduction type, and material composition. We have fabricated 1.55 μm InGaAsP/InP strained multiple quantum well (MQW) DFB lasers having different absorptive grating thickness and different conduction type. Lasing characteristics of these lasers were compared with regard to coupling coefficients and absorption saturation. Through net gain measurement, information useful for designing and optimizing the absorptive grating was obtained

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; light absorption; quantum well lasers; 1.55 micrometre; III-V semiconductors; InGaAs; InGaAsP-InP-InGaAs; InGaAsP/InP; absorption saturation; absorptive grating structures; conduction type; coupling coefficients; duty cycle; lasing characteristics; layer thickness; material composition; net gain measurement; strained MQW gain-coupled DFB lasers; Absorption; Composite materials; Conducting materials; Gratings; Indium gallium arsenide; Indium phosphide; Optical coupling; Optical materials; Quantum well devices; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600132

Filename

600132