Title :
Electro-luminescence from un-doped and doped nanocrystalline Si/SiO2 multilayers
Author :
Wei, D.Y. ; Wang, T. ; Sun, H.C. ; Liu, Y. ; Chen, D.Y. ; Xu, J. ; Ma, Z.Y. ; Chen, K.J.
Author_Institution :
Dept. of Phys., Nanjing Univ., Nanjing
Abstract :
Electroluminescence devices based on nanocrystalline Si/SiO2 multilayers were fabricated and the luminescence can be observed both from vertical and lateral direction. Moreover, P-doped nanocrystalline Si/SiO2 multilayers were prepared and the improved electro-luminescence characteristics were achieved.
Keywords :
electroluminescent devices; elemental semiconductors; multilayers; nanostructured materials; silicon; silicon compounds; Si-SiO2; electroluminescence; nanocrystalline Si/SiO2 multilayers; Integrated circuit technology; Luminescence; Nanoscale devices; Nonhomogeneous media; Photonic integrated circuits; Plasma temperature; Rapid thermal annealing; Semiconductor films; Size control; Substrates;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638119
