DocumentCode
3014172
Title
Spatial Characterization of Germanium-on-Silicon C-Band PIN Photodiodes
Author
Orcutt, J.S. ; Olubuyide, O.O. ; Hoyt, J.L. ; Ram, R.J.
Author_Institution
Massachusetts Inst. of Technol., Cambridge
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Spatially-resolved photoresponse and modulation measurements of vertically- illuminated germanium-on-silicon photodiodes are presented. It is shown that, even in a planar device, localized traps at the perimeter limit both quantum efficiency and modulation bandwidth.
Keywords
optical modulation; p-i-n photodiodes; waveguide lasers; C band PIN photodiodes; germanium on silicon; localized traps; modulation measurements; photoresponse; planar device; spatial characterization; Diodes; Germanium; High speed optical techniques; Optical devices; Optical films; Optical modulation; PIN photodiodes; Passivation; Performance evaluation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453116
Filename
4453116
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