Title :
Spatial Characterization of Germanium-on-Silicon C-Band PIN Photodiodes
Author :
Orcutt, J.S. ; Olubuyide, O.O. ; Hoyt, J.L. ; Ram, R.J.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge
Abstract :
Spatially-resolved photoresponse and modulation measurements of vertically- illuminated germanium-on-silicon photodiodes are presented. It is shown that, even in a planar device, localized traps at the perimeter limit both quantum efficiency and modulation bandwidth.
Keywords :
optical modulation; p-i-n photodiodes; waveguide lasers; C band PIN photodiodes; germanium on silicon; localized traps; modulation measurements; photoresponse; planar device; spatial characterization; Diodes; Germanium; High speed optical techniques; Optical devices; Optical films; Optical modulation; PIN photodiodes; Passivation; Performance evaluation; Silicon;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453116
