Title :
Wavelength dependence of the ultrafast third-order nonlinearity of Silicon
Author :
Foster, Mark A. ; Gaeta, Alexander L.
Author_Institution :
Cornell Univ., Ithaca
Abstract :
We measure the wavelength dependence of the nonlinear index n2 and two-photon absorption coefficients of bulk silicon below the band edge. In contrast to direct-bandgap semiconductors, silicon shows a positive n2 throughout the band gap.
Keywords :
absorption coefficients; elemental semiconductors; high-speed optical techniques; nonlinear optics; silicon; Si; band gap; nonlinear index; two-photon absorption coefficients; ultrafast third-order nonlinearity; Integrated optics; Nonlinear optics; Optical pulses; Optical refraction; Probes; Pulse amplifiers; Pulse measurements; Silicon; Ultrafast optics; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453117
