DocumentCode :
3014238
Title :
Measurement of the near infrared absorption of Ge on Si films by differential spectroscopy
Author :
Sorianello, V. ; Perna, A. ; Colace, L. ; Assanto, G. ; Luan, H.C. ; Kimerling, L.C.
Author_Institution :
NooEL- Nonlinear Opt. & Optoelectron. Lab., Univ. "Roma Tre", Rome
fYear :
2008
fDate :
17-19 Sept. 2008
Firstpage :
134
Lastpage :
136
Abstract :
Using a differential method on epitaxially grown Ge films on silicon, we measure the near-infrared absorption and its temperature dependence.
Keywords :
elemental semiconductors; germanium; infrared spectra; semiconductor epitaxial layers; silicon; Ge-Si; differential spectroscopy; epitaxial germanium film; near infrared absorption spectra; silicon film; Electromagnetic wave absorption; Infrared spectra; Optical films; Optical receivers; Optical reflection; Photodetectors; Semiconductor films; Spectroscopy; Temperature dependence; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
Type :
conf
DOI :
10.1109/GROUP4.2008.4638122
Filename :
4638122
Link To Document :
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