Title :
CMOS-Compatible High Frequency Infrared Photodiodes
Author :
Geis, M.W. ; Spector, S.J. ; Grein, M.E. ; Schulein, R.T. ; Yoon, J.U. ; Lennon, D.M. ; Deneault, S. ; Gan, F. ; Kårtner, F.X. ; Lyszczarz, T.M.
Author_Institution :
Massachusetts Inst. of Technol., Lexington
Abstract :
CMOS-compatible, silicon waveguide photodiodes, responding to radiation from 1270 to 1740 nm (0.8 A W-1 at 1550 nm) with a 3 dB bandwidth of 10 to 20 GHz were formed by Si ion implantation.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated optoelectronics; ion implantation; optical waveguides; photodiodes; silicon; CMOS-compatible high frequency infrared photodiodes; Si; frequency 10 GHz to 20 GHz; ion implantation; silicon waveguide photodiodes; wavelength 1270 nm to 1740 nm; Absorption; Annealing; Bandwidth; Frequency; Ion implantation; Optical waveguides; P-i-n diodes; Particle beam optics; Photodiodes; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453121
