DocumentCode
3014266
Title
SOI submicron rib waveguides: Design, fabrication and characterization
Author
Xu, Xuejun ; Chen, Shaowu ; Li, Zhiyong ; Yu, Yude ; Yu, Jinzhong
Author_Institution
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing
fYear
2008
fDate
17-19 Sept. 2008
Firstpage
137
Lastpage
139
Abstract
We present detailed design, fabrication, and characterization issues of submicron rib waveguides based on silicon-on-insulator. The waveguides fabricated by EBL and ICP processes have propagation loss of 1.8 dB/mm and bend loss of 0.14 dB/90deg for bends with radius of 5 mum.
Keywords
electron beam lithography; optical waveguides; rib waveguides; silicon-on-insulator; sputter etching; bend loss; electron-beam lithography; inductively coupled plasma dry etching; propagation loss; radius 5 mum; silicon-on-insulator; submicron rib waveguides; CMOS process; CMOS technology; Dry etching; Lithography; Optical device fabrication; Optical fiber polarization; Plasma measurements; Propagation losses; Silicon; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location
Cardiff
Print_ISBN
978-1-4244-1769-8
Electronic_ISBN
978-1-4244-1768-1
Type
conf
DOI
10.1109/GROUP4.2008.4638123
Filename
4638123
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