DocumentCode
3014372
Title
High Repetition Rate Monolithic Passively Mode-Locked Semiconductor Quantum-Dot Laser: Investigation of the Locking Regimes and the RF Linewidth
Author
Kéfélian, Fabien ; Donoghue, Shane O. ; Todaro, Maria Teresa ; McInerney, John ; Huyet, Guillaume
Author_Institution
Tyndall Nat. Inst., Cork
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We investigate global mode-locked regimes of a passively mode-locked quantum-dot GaAs/InAs laser at 1300 nm. Detailed RF linewidth studies demonstrate the possibility of obtaining 1.9 ps pulses with a pulse-to-pulse timing jitter of 6.5 fs/cycle.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; quantum dot lasers; semiconductor quantum dots; spectral line breadth; GaAs-InAs; RF linewidth; locking regimes; monolithic passively mode-locked laser; pulse-to-pulse timing jitter; semiconductor quantum-dot laser; time 1.9 ps; wavelength 1300 nm; High speed optical techniques; Laser mode locking; Laser noise; Optical pulses; Phase noise; Quantum dot lasers; Radio frequency; Semiconductor lasers; Timing jitter; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453127
Filename
4453127
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