DC current rectification using indium-gallium zinc oxide-based selfswitching diodes

Author

Fryer, A.C. ; Flewitt, Andrew J. ; Ramsdale, C.

Author_Institution

Org. Mater. Innovation Centre, Univ. of Manchester, Manchester, UK

fYear

2013

fDate

5-8 Aug. 2013

Firstpage

713

Lastpage

716

Abstract

Self-switching diodes have been fabricated within a single layer of indium-gallium zinc oxide (IGZO). Current-voltage (I-V) measurements show the nanometer-scale asymmetric device gave a diode-like response. Full current rectification was achieved using very narrow channel widths of 50nm, with a turn-on voltage, V_on, of 2.2V. The device did not breakdown within the -10V bias range measured. This single diode produced a current of 0.1μA at 10V and a reverse current of less than 0.1nA at -10V. Also by adjusting the channel width for these devices, V_on could be altered; however, the effectiveness of the rectification also changed.

Keywords

electric current measurement; gallium compounds; indium compounds; nanoelectronics; rectification; semiconductor diodes; voltage measurement; DC current rectification; I-V measurements; IGZO; InGaZnO; current 0.1 muA; current-voltage measurements; diode-like response; indium-gallium zinc oxide; nanometer-scale asymmetric device; self-switching diodes; single diode; voltage 10 V; voltage 2.2 V; Current measurement; Semiconductor device measurement; Semiconductor diodes; Substrates; Zinc oxide; indium-gallium zinc oxide; self-switching diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on

Conference_Location

Beijing

ISSN

1944-9399

Print_ISBN

978-1-4799-0675-8

Type

conf

DOI

10.1109/NANO.2013.6720808

Filename

6720808