Title :
Investigation of silicon—germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition
Author :
Lee, Ching Ting ; Lin, Jian Gang ; Lee, Hsin Ying
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Abstract :
SiGe based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated, in which the SiGe channel layer was deposited by using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) system. The characteristics were compared with the device without laser assistance.
Keywords :
Ge-Si alloys; MOSFET; plasma CVD; semiconductor materials; MOSFET; SiGe; laser-assisted plasma-enhanced chemical vapor deposition; metal-oxide-semiconductor field-effect transistors; Chemical lasers; Chemical vapor deposition; FETs; Gas lasers; Germanium silicon alloys; Lasers and electrooptics; MOSFETs; Plasma chemistry; Silicon germanium; Sputtering; SiGe thin film; laser-assisted plasma-enhanced chemical vapor deposition; metal-oxide-semiconductor field-effect transistors;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638131
