DocumentCode
3014412
Title
Investigation of silicon—germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition
Author
Lee, Ching Ting ; Lin, Jian Gang ; Lee, Hsin Ying
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
fYear
2008
fDate
17-19 Sept. 2008
Firstpage
161
Lastpage
163
Abstract
SiGe based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated, in which the SiGe channel layer was deposited by using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) system. The characteristics were compared with the device without laser assistance.
Keywords
Ge-Si alloys; MOSFET; plasma CVD; semiconductor materials; MOSFET; SiGe; laser-assisted plasma-enhanced chemical vapor deposition; metal-oxide-semiconductor field-effect transistors; Chemical lasers; Chemical vapor deposition; FETs; Gas lasers; Germanium silicon alloys; Lasers and electrooptics; MOSFETs; Plasma chemistry; Silicon germanium; Sputtering; SiGe thin film; laser-assisted plasma-enhanced chemical vapor deposition; metal-oxide-semiconductor field-effect transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location
Cardiff
Print_ISBN
978-1-4244-1769-8
Electronic_ISBN
978-1-4244-1768-1
Type
conf
DOI
10.1109/GROUP4.2008.4638131
Filename
4638131
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