DocumentCode :
3014510
Title :
Low dark-current Ge photodiodes on Si with intrinsic-Si-layer insertion
Author :
Park, Sungbong ; Takita, Shinya ; Ishikawa, Yasuhiko ; Osaka, Jiro ; Wada, Kazumi
Author_Institution :
Dept. of Mater. Eng., Tokyo Univ., Tokyo
fYear :
2008
fDate :
17-19 Sept. 2008
Firstpage :
179
Lastpage :
181
Abstract :
We demonstrated as-grown Ge p-i-n photodiode on Si with low dark current (~10 mA/cm2) and comparable responsivity. Such a low temperature fabrication is crucial to realize ldquobackendrdquo process for Ge integration in Si photonics.
Keywords :
dark conductivity; elemental semiconductors; germanium; integrated optics; p-i-n photodiodes; semiconductor epitaxial layers; silicon; Ge-Si; Si photonics integration; backend process; dark current; intrinsic silicon layer insertion; p-i-n photodiode; Annealing; Dark current; Electrodes; Equations; Etching; Fabrication; Optical interconnections; PIN photodiodes; Photonics; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
Type :
conf
DOI :
10.1109/GROUP4.2008.4638137
Filename :
4638137
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3014510
بازگشت