Title :
Ge on Si p-i-n photodetectors with 40 GHz bandwidth
Author :
Klinger, S. ; Vogel, W. ; Berroth, M. ; Kaschel, M. ; Oehme, M. ; Kasper, E.
Author_Institution :
Inst. of Electr. & Opt. Commun. Eng., Univ. Stuttgart, Stuttgart
Abstract :
Germanium photodiodes grown on a silicon substrate are characterized for various diameters and thicknesses of the active absorption region. High frequency measurements using a vector network analyzer are reported for frequencies up to 45 GHz showing a record bandwidth of 40 GHz.
Keywords :
elemental semiconductors; germanium; p-i-n photodiodes; photodetectors; Ge; Si; frequency 45 GHz; germanium photodiode; p-i-n photodetector; silicon substrate; vector network analyzer; Absorption; Bandwidth; Etching; Optical fiber communication; PIN photodiodes; Photodetectors; Scattering parameters; Silicon; Space charge; Voltage; Ge on Si photodiodes; Integrated optical receivers; telecommunications;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638140
