Title :
35 GHz Ge p-i-n photodetectors implemented using RPCVD
Author :
Suh, Dongwoo ; Kim, Sanghoon ; Joo, Jiho ; Kim, Gyungock ; Kim, In Gyoo
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon
Abstract :
Vertical Ge photodetectors were fabricated on silicon using RPCVD showing bandwidth of 35 GHz at -3 V, dark current of 30 nA, and responsivity of 0.47 A/W for 20 mum-diameter detectors.
Keywords :
chemical vapour deposition; elemental semiconductors; germanium; photodetectors; Ge; RPCVD; dark current; frequency 35 GHz; p-i-n photodetectors; responsivity; Bandwidth; Detectors; Lattices; Optical waveguides; PIN photodiodes; Photodetectors; Silicon; Substrates; Telecommunications; Wavelength measurement;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638141
