Title :
Ge/SiGe multiple quantum wells for optical applications
Author :
Chrastina, D. ; Neels, A. ; Bonfanti, M. ; Virgilio, M. ; Isella, G. ; Grilli, E. ; Guzzi, M. ; Grosso, G. ; Sigg, H. ; Von Känel, H.
Author_Institution :
Dip. di Fis., Politec. di Milano, Como
Abstract :
High-quality Ge/Si0.15Ge0.85 multiple quantum wells have been grown by low-energy plasma-enhanced chemical vapor deposition. Structural and optical properties have been measured by X-ray diffraction, optical transmission, photoluminescence and photocurrent experiments.
Keywords :
Ge-Si alloys; X-ray diffraction; elemental semiconductors; germanium; photoconductivity; photoluminescence; plasma CVD; semiconductor quantum wells; Ge-SiGe; X-ray diffraction; low-energy plasma-enhanced chemical vapor deposition; multiple quantum wells; optical properties; optical transmission; photocurrent; photoluminescence; structural properties; Chemical vapor deposition; Germanium silicon alloys; Optical diffraction; Plasma applications; Plasma chemistry; Plasma measurements; Plasma properties; Plasma x-ray sources; Silicon germanium; X-ray diffraction;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638142
