Title :
Schottky barrier lowering effect in AlGaN/GaN heterostructure SBDs using nano-particles
Author :
Min-Seok Kang ; Hyung-Seok Lee ; Jung-Ho Lee ; Sang-Mo Koo
Author_Institution :
Dept. of Electronicmaterials Eng., Kwangwoon Univ., Seoul, South Korea
Abstract :
The correlations between the properties of an AlGaN/GaN device and the Schottky contact structure with and without nanoparticles (NPs) have been investigated. It has been found that the use of NPs effectively lowers the barrier height of the electrical contacts to AlGaN/GaN 2-DEG heterostructures. The Schottky barrier height of the Ni contact with embedded Au-NPs was significantly reduced by ~0.16 eV compared to the reference sample without NPs. The fabricated AlGaN/GaN SBDs with embedded Au-NPs show a turn-on voltage of ~1.7 V and an on-resistance of ~12.5 Ω·mm, respectively.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; aluminium compounds; gallium compounds; gold; nanocomposites; nanocontacts; nanofabrication; nanoparticles; nickel; semiconductor heterojunctions; semiconductor-metal boundaries; two-dimensional electron gas; wide band gap semiconductors; 2DEG heterostructures; AlGaN-GaN heterostructure Schottky barrier diodes; AlGaN-GaN-Au-Ni; Schottky barrier lowering effect; Schottky contact structure; barrier height; electrical contacts; embedded gold nanoparticles; nickel contact; on-resistance; turn-on voltage; Aluminum gallium nitride; Gallium nitride; Gold; Nickel; Schottky barriers; Schottky diodes;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-0675-8
DOI :
10.1109/NANO.2013.6720823
