Title :
10Gbit/s 2mW inductorless transimpedance amplifier
Author :
Atef, Mohamed ; Zimmermann, Horst
Author_Institution :
Vienna University of Technology, Institute of Electrodynamics Microwave and Circuit Engineering, Gusshausstrasse 25 / 354, 1040, Austria
Abstract :
This work presents the design and performance of a 10Gbit/s transimpedance amplifier (TIA) implemented in a 40nm CMOS technology. The introduced TIA uses an inverter with active common-drain feedback (ICDF-TIA). The TIA is followed by a two-stage differential amplifier and a 50Ω differential output driver to provide an interface to the measurement setup. The optical receiver shows an optical sensitivity of −19dBm for a BER= 10−12. The transimpedance amplifier achieves a transimpedance gain of 47dBΩ, 8GHz bandwidth with 0.45pF total input capacitance for the photodiode, ESD protection and input PAD. The TIA occupies 0.0002mm2 whereas the complete optical receiver occupies a chip area of 0.16mm2. The power consumption of the TIA is only 2mW and the complete chip dissipates 16mW for a 1.1V single supply voltage. The complete optical receiver has a 58dBΩ transimpedance gain and 7GHz bandwidth.
Keywords :
Bandwidth; CMOS integrated circuits; Impedance; Inverters; Noise; Optical receivers; Power demand;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul, Korea (South)
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6271595