• DocumentCode
    3015086
  • Title

    Taguchi optimization for the processing of Epon SU-8 resist

  • Author

    Eyre, B. ; Blosiu, J. ; Wiberg, D.

  • Author_Institution
    Center for Space Microelectron. Technol., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    1998
  • fDate
    25-29 Jan 1998
  • Firstpage
    218
  • Lastpage
    222
  • Abstract
    Using the Taguchi technique an optimization experiment was performed to characterize the processing of Epon SU-8 negative photoresist. This photoresist has proven to be very sensitive to process variations and difficult to use. The Taguchi method reveals output sensitivity to variations in control factors. Using five processing parameters as control factors, experiments were performed and results were evaluated by comparison to ideal output characteristics. Analyzing the results, a proposed fabrication process was derived from optimizing the control factors for the best overall mean across all the outputs. The experiment was repeated for three film thicknesses: 50 μm, 100 μm,and 220 μm. The desired output characteristics were straight sidewall profile, fine line and space resolution, and adhesion to substrate. Tables show optimized processing parameters for these three film thicknesses
  • Keywords
    micromechanical devices; optimisation; photoresists; 100 mum; 220 mum; 50 mum; Epon SU-8 resist; Taguchi optimization; adhesion; control factors; fabrication process; film thickness; fine line; optimized processing parameters; output sensitivity; photoresist; processing parameters; sidewall profile; space resolution; Absorption; Coatings; EPON; Fabrication; Optical films; Passive optical networks; Resists; Space technology; Substrates; Thick films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 1998. MEMS 98. Proceedings., The Eleventh Annual International Workshop on
  • Conference_Location
    Heidelberg
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-4412-X
  • Type

    conf

  • DOI
    10.1109/MEMSYS.1998.659757
  • Filename
    659757