Title :
Size distribution of silicon nanoclusters determined by transmission electron microscopy
Author :
Mokry, C.R. ; Simpson, P.J. ; Knights, A.P.
Author_Institution :
Univ. of Western Ontario, London, ON
Abstract :
Silicon nanoclusters were formed in SiO2 by ion implantation and annealing. Transmission Electron Microscopy (TEM) images were used to investigate their size distribution as a function of depth in the oxide film.
Keywords :
annealing; atomic clusters; elemental semiconductors; ion implantation; nanostructured materials; silicon; silicon compounds; transmission electron microscopy; Si-SiO2; TEM; annealing; ion implantation; silicon nanoclusters; size distribution; transmission electron microscopy; Electron beams; Implants; Ion beams; Ion implantation; Optical films; Rapid thermal annealing; Scanning electron microscopy; Silicon; Substrates; Transmission electron microscopy;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638168
