DocumentCode :
3015168
Title :
Design of GeSiSn/Ge quantum cascase laser
Author :
Sun, G. ; Khurgin, J.B. ; Menéndez, J. ; Soref, R.A.
Author_Institution :
Dept. of Phys., Massachusetts Univ., Boston, MA
fYear :
2008
fDate :
17-19 Sept. 2008
Firstpage :
273
Lastpage :
275
Abstract :
We design a lattice-matched Ge/Ge0.76Si0.19Sn0.05 quantum cascade laser emitting at 49 mum. This particular alloy composition gives a ldquocleanrdquo conduction band offset of 150 meV at L-valleys with all other energy valleys sitting higher in energy.
Keywords :
Ge-Si alloys; conduction bands; elemental semiconductors; germanium; quantum cascade lasers; semiconductor heterojunctions; tin alloys; GeSiSn-Ge; L-valleys; conduction band offset; lattice-matched quantum cascade laser; quantum cascade laser; Acoustic scattering; Germanium silicon alloys; III-V semiconductor materials; Laser transitions; Optical design; Optical materials; Optical scattering; Photonic band gap; Quantum cascade lasers; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
Type :
conf
DOI :
10.1109/GROUP4.2008.4638170
Filename :
4638170
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3015168
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