The Si precipitation problem in aluminium alloy (Al-Si-Cu) metallization

Author

Hua, Y.N. ; Liu, E.Z. ; An, L.H. ; Chau, Daniel K W

Author_Institution

Chartered Semicond. Manuf. Ltd., Singapore

fYear

1998

fDate

1998

Firstpage

13

Lastpage

16

Abstract

Some lots of wafers were reported with low yield due to ANADC pattern functional failure. SEM, EDX and 155 Wright etch techniques were used to identify the root causes. Cross sectional results found the nodules on substrate at the contact area. EDX analysis confirmed them to be silicon nodules. After 155 Wright etch (100) square silicon crystalline hillocks were found on the substrate at the contact area. It is concluded that silicon nodules on the substrate at the contact area had resulted in an open circuit and low yield. These silicon nodules were due to Si precipitation on the substrate of the contacts

Keywords

X-ray chemical analysis; aluminium alloys; copper alloys; etching; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; precipitation; scanning electron microscopy; silicon alloys; ANADC pattern functional failure; Al-Si-Cu metallization; AlSiCu; EDX; EDX analysis; SEM; Si; Si nodules; Si precipitation; Wright etch techniques; aluminium alloy metallization; failure root cause identification; open circuit; silicon nodules; square silicon crystalline hillocks; substrate contact area; wafer lot yield; Aluminum alloys; Crystallization; Etching; Failure analysis; Metallization; Packaging; Problem-solving; Silicon; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on

Conference_Location

Bangi

Print_ISBN

0-7803-4971-7

Type

conf

DOI

10.1109/SMELEC.1998.781141

Filename

781141