Effect of electron-beam irradiation on the formation of nanocrystalline Si in Al-added amorphous Si films

Author

Shim, Jae-Hyun ; Cho, Nam-Hee ; Kim, Jin-Gyu ; Kim, Yoon-Joong ; Lee, El-Hang

Author_Institution

Dept. of Mater. Sci. & Eng., Inha Univ., Incheon

fYear

2008

fDate

17-19 Sept. 2008

Firstpage

276

Lastpage

278

Abstract

Si nanocrystallites of ~ 10 nm were formed in Al-added amorphous Si films by the irradiation of a focused electron-beam; the crystallite volume fraction in the films varied from ~ 35.7 to ~ 94.8 % as the in-situ temperature was raised from 200 to 400 degC. The activation energy for the nucleation of Si crystallites in the a-Al_0.025Si_0.975 film under the electron-beam irradiation was measured to be 0.8 plusmn 0.13 eV.

Keywords

aluminium compounds; amorphous semiconductors; crystallisation; crystallites; electron beam effects; elemental semiconductors; nanostructured materials; nanotechnology; nucleation; semiconductor thin films; silicon; Al_0.025Si_0.975; Si; amorphous silicon film; focused electron beam irradiation; nucleation activation energy; silicon nanocrystallites; temperature 200 degC to 400 degC; Amorphous materials; Crystallization; Current density; Materials science and technology; Optical films; Semiconductor films; Semiconductor thin films; Sputtering; Temperature; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics, 2008 5th IEEE International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1769-8

Electronic_ISBN

978-1-4244-1768-1

Type

conf

DOI

10.1109/GROUP4.2008.4638171

Filename

4638171