Title :
Effect of electron-beam irradiation on the formation of nanocrystalline Si in Al-added amorphous Si films
Author :
Shim, Jae-Hyun ; Cho, Nam-Hee ; Kim, Jin-Gyu ; Kim, Yoon-Joong ; Lee, El-Hang
Author_Institution :
Dept. of Mater. Sci. & Eng., Inha Univ., Incheon
Abstract :
Si nanocrystallites of ~ 10 nm were formed in Al-added amorphous Si films by the irradiation of a focused electron-beam; the crystallite volume fraction in the films varied from ~ 35.7 to ~ 94.8 % as the in-situ temperature was raised from 200 to 400 degC. The activation energy for the nucleation of Si crystallites in the a-Al0.025Si0.975 film under the electron-beam irradiation was measured to be 0.8 plusmn 0.13 eV.
Keywords :
aluminium compounds; amorphous semiconductors; crystallisation; crystallites; electron beam effects; elemental semiconductors; nanostructured materials; nanotechnology; nucleation; semiconductor thin films; silicon; Al0.025Si0.975; Si; amorphous silicon film; focused electron beam irradiation; nucleation activation energy; silicon nanocrystallites; temperature 200 degC to 400 degC; Amorphous materials; Crystallization; Current density; Materials science and technology; Optical films; Semiconductor films; Semiconductor thin films; Sputtering; Temperature; Transmission electron microscopy;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638171
