Application of large signal network analyzer measurements to model verification and device modeling

Modeling the nonlinear behavior in RF transistors has emerged as one of the most important issues for the design of future RF and mm-wave circuits. The large signal network analyzer (LSNA) and non-linear vector analyzer (NVNA) are providing new tools for the characterization of the non-linear response of RF transistors. This paper illustrates the application of LSNA measurements to various features of importance in device modeling including: (1) modeling of the nonlinearities, (2) low frequency dispersion, (3) symmetry of device characteristics in the inverted mode of operation and (4) the substrate network. The examples taken are mostly from 65 nm Si MOSFETs. Preliminary results on direct model extractions from real-time active load pull date are also presented.