Title :
Modelling of threshold voltage with non-uniform substrate doping [MOSFET]
Author :
Lim, K.Y. ; Zhou, X.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
A simple analytical threshold voltage equation for modelling nonuniform MOSFET channel doping is derived, which takes the peak doping concentration and peak location as inputs with a single process-dependent fitting parameter. The model has been verified with extensive numerical simulation results and can be applied to real devices for a wide range of nonuniform doping profiles with a simple, empirical parameter extraction
Keywords :
MOSFET; doping profiles; numerical analysis; semiconductor device models; MOSFET; analytical threshold voltage equation; empirical parameter extraction; nonuniform MOSFET channel doping modelling; nonuniform doping profiles; nonuniform substrate doping; numerical simulation; peak doping concentration; peak doping location; process-dependent fitting parameter; threshold voltage modelling; Analytical models; Annealing; Doping profiles; Equations; MOSFETs; Medical simulation; Numerical simulation; Parameter extraction; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location :
Bangi
Print_ISBN :
0-7803-4971-7
DOI :
10.1109/SMELEC.1998.781144
