Simulation of charge pumping current in hot-carrier degraded p-MOSFET´s

Author

Samudra, G.S. ; Yip, Anselm ; See, L.K.

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore

fYear

1998

fDate

1998

Firstpage

32

Lastpage

36

Abstract

Charge pumping is a widely used method of evaluating the Si-SiO ₂ interfaces in MOSFETs. The modelling of this technique in a p-MOSFET using two-dimensional device simulator is presented. A two-dimensional transient model which accounts for the interface-state dynamics is employed to simulate the charge pumping in MOSFETs with good accuracy. The simulation results are substantiated by measurement results

Keywords

MOSFET; hot carriers; interface states; semiconductor device measurement; semiconductor device models; semiconductor device reliability; transient analysis; 2D device simulator; 2D transient model; MOSFET Si-SiO₂ interfaces; MOSFETs; Si-SiO₂; charge pumping; charge pumping current; hot-carrier degraded p-MOSFETs; interface-state dynamics; measurement; modelling; p-MOSFET; simulation; Analytical models; Charge measurement; Charge pumps; Current measurement; Degradation; Electron traps; Frequency; Hot carriers; MOSFET circuits; Numerical models;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on

Conference_Location

Bangi

Print_ISBN

0-7803-4971-7

Type

conf

DOI

10.1109/SMELEC.1998.781145

Filename

781145