Title :
Effects of changing Al mole fraction on the performance of an InGaAlAs-InP DBRTD
Author :
Lim, C.H. ; Chua, S.J. ; Karunasiri, G.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
The effects of changing the InAlGaAs alloy composition in the contact, barrier and well layers of a double barrier resonant tunnelling diode (DBRTD), lattice-matched to the InP substrate, on the transmission curves and the peak-to-valley current ratio (PVCD) have been studied. A simple RTD model, in which the applied bias is assumed to drop across the double barrier region, is used in the simulation. The Airy function formalism is used to solve the Schrodinger equation in the structure and the transfer matrix method is used to calculate the transmission coefficient, which is then used to calculate the Tsu and Esaki tunnelling current. It is found that among all the structures studied, RTDs with In0.52Al0.48As barriers and In0.52 Al0.48As well and contact have the best performance
Keywords :
III-V semiconductors; Schrodinger equation; aluminium compounds; gallium arsenide; indium compounds; resonant tunnelling diodes; semiconductor device models; transfer function matrices; Airy function formalism; Al mole fraction; In0.52Al0.48As; In0.52Al0.48As barriers; In0.52Al0.48As contact; In0.52Al0.48As well; InAlGaAs alloy composition; InGaAlAs-InP; InGaAlAs-InP DBRTD; InP; InP substrate lattice matching; RTD model; Schrodinger equation; Tsu/Esaki tunnelling current; applied bias; barrier layers; contact layers; double barrier region; double barrier resonant tunnelling diode; peak-to-valley current ratio; transfer matrix method; transmission coefficient; transmission curves; well layers; Circuits; Contacts; Current density; Electrons; Fabrication; Indium phosphide; Schrodinger equation; Structural engineering; Tunneling; Voltage;
Conference_Titel :
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location :
Bangi
Print_ISBN :
0-7803-4971-7
DOI :
10.1109/SMELEC.1998.781146
