DocumentCode :
3015267
Title :
Surface-potential-based MOSFET models with introduction to PSP (invited)
Author :
Gildenblat, G. ; Wu, W. ; Li, X. ; Zhu, Z. ; Smit, G.D.J. ; Scholten, A.J. ; Klaassen, D.B.M.
Author_Institution :
Arizona State Univ., Tempe, AZ, USA
fYear :
2009
fDate :
20-21 April 2009
Firstpage :
1
Lastpage :
2
Abstract :
We review compact modeling techniques that enable a surface-potential-based approach to modeling MOS transistors. These include symmetric linearization method, an analytical approximation of surface potential and surface potential-based extrinsic device model. General techniques are illustrated by application to the PSP model.
Keywords :
MOSFET; linearisation techniques; semiconductor device models; surface potential; MOS transistor; PSP model; extrinsic device model; surface-potential-based MOSFET model; symmetric linearization method; Channel bank filters; Circuit simulation; Computational modeling; Iterative methods; MOS devices; MOSFET circuits; Physics computing; Standards development; Standards publication; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless and Microwave Technology Conference, 2009. WAMICON '09. IEEE 10th Annual
Conference_Location :
Clearwater, FL
Print_ISBN :
978-1-4244-4564-6
Electronic_ISBN :
978-1-4244-4565-3
Type :
conf
DOI :
10.1109/WAMICON.2009.5207226
Filename :
5207226
Link To Document :
بازگشت