DocumentCode :
3015332
Title :
Localized electrochemical plating of interconnectors for microelectronics
Author :
El-Giar, E.M. ; Thomson, D.J.
Author_Institution :
Cairo Univ., Egypt
fYear :
1997
fDate :
22-23 May 1997
Firstpage :
327
Lastpage :
332
Abstract :
This work demonstrates the electrodeposition of micrometer scale copper structures including columns and interconnectors. Copper interconnectors of 25 μm width were grown within an integrated circuit package using a simple instrument based on the scanning electrochemical microscope. In the present instrument electrodeposition is localized by applying a voltage between a closely spaced glass insulated Pt disk tip (diameter ca. 25 μm) and a substrate, all immersed in a plating solution of acidified CuSO4. The parameters that affect the deposition process are also addressed
Keywords :
electroplating; integrated circuit interconnections; scanning electron microscopy; 25 micron; Cu; CuSO4; Pt; columns; copper interconnectors; deposition process parameters; glass insulated platinum disk tip; instrument electrodeposition; integrated circuit package; microelectronics; micrometer scale copper structures; plating solution; scanning electrochemical microscope; substrate; voltage; Aluminum; Chemical vapor deposition; Conducting materials; Conductivity; Copper; Electrodes; Integrated circuit interconnections; Integrated circuit packaging; Microelectronics; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
WESCANEX 97: Communications, Power and Computing. Conference Proceedings., IEEE
Conference_Location :
Winnipeg, Man.
Print_ISBN :
0-7803-4147-3
Type :
conf
DOI :
10.1109/WESCAN.1997.627162
Filename :
627162
Link To Document :
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