DocumentCode :
3015362
Title :
Ultrafast Carrier Dynamics in an InAs/InGaAs Quantum-Dots-in-a-Well Photodetector
Author :
Prasankumar, R.P. ; Attaluri, R.S. ; Averitt, R.D. ; Stintz, A. ; Krishna, S. ; Taylor, A.J.
Author_Institution :
Los Alamos Nat. Lab., Los Alamos
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
Differential transmission spectroscopy is used to measure carrier dynamics in a quantum-dots-in-a-well heterostructure. This provides fundamental insight into carrier relaxation from three to two to zero dimensions and has significant implications for dots-in-a-well-based mid-infrared photodetectors.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; semiconductor quantum wells; InAs-InGaAs; carrier relaxation; differential transmission spectroscopy; mid-infrared photodetectors; quantum- dots-in-a-well photodetector; quantum-dots-in-a-well heterostructure; ultrafast carrier dynamics; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Laser excitation; Photodetectors; Quantum dots; Stationary state; Tunable circuits and devices; Ultrafast optics; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4453180
Filename :
4453180
Link To Document :
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