Title :
The effect of backside films on rapid thermal oxidation (RTO) growth on silicon wafers
Author :
Omar, Abdullah B. ; Ahmad, Ibrahim B.
Author_Institution :
Semicond. Technol. Centre, Kuala Lumpur, Malaysia
Abstract :
The effect of backside films, namely silicon dioxide, silicon nitride and bare silicon on rapid thermal oxidation (RTO) growth on silicon wafers by the rapid thermal annealing technique was systematically studied. There was also a comparison study on the effect of doped backside films with phosphorus at 4×1014 atoms/cm2 by ion implantation at 100 keV and the undoped films. The RTO layer thickness has been measured by ellipsometry and the target thickness was 10 nm. The rapid thermal annealing system used was the AG Associates 2146 Heatpulse model. The temperature chosen was 1100°C. It was demonstrated that thinner RTO layers could be obtained by having sufficient silicon dioxide film at the backside; however, the presence of doped backside layers has no effect on the tunnel oxide growth
Keywords :
dielectric thin films; elemental semiconductors; ellipsometry; integrated circuit technology; ion implantation; oxidation; rapid thermal annealing; silicon; 10 nm; 100 keV; 1100 C; AG Associates 2146 Heatpulse model; P-doped backside films; RTO; RTO layer thickness; Si; Si3N4-Si; Si3N4:P-Si; SiO2-Si; SiO2:P-Si; backside film effects; bare silicon backside films; doped backside layers; ellipsometry; ion implantation; rapid thermal annealing; rapid thermal oxidation; silicon dioxide backside films; silicon nitride backside films; silicon wafers; target thickness; tunnel oxide growth; undoped films; Atomic layer deposition; Atomic measurements; Ellipsometry; Ion implantation; Oxidation; Rapid thermal annealing; Semiconductor films; Silicon compounds; Temperature; Thickness measurement;
Conference_Titel :
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location :
Bangi
Print_ISBN :
0-7803-4971-7
DOI :
10.1109/SMELEC.1998.781154
