Title :
Degradation modeling of semiconductor devices and electrical circuits
Author :
Lagies, A.U. ; Göhler, L. ; Sigg, J. ; Turkes, P. ; Kraus, R.
Author_Institution :
Inst. of Electron., Bundeswehr Munich Univ., Germany
Abstract :
A mathematical description for the degradation of semiconductor devices and electrical circuits is presented. It is based on the assumption that the reason for degradation is destruction of the internal structures, caused by the input of energy. The formulation is tested with the simulation of an IGBT module. Additionally, a method is presented to shorten the simulation time as much as possible
Keywords :
circuit reliability; failure analysis; insulated gate bipolar transistors; integrated circuit modelling; modules; semiconductor device models; semiconductor device reliability; IGBT module; degradation modeling; electrical circuit degradation; electrical circuits; energy input; internal structure destruction; mathematical description; semiconductor device degradation; semiconductor devices; simulation; simulation time; Circuit simulation; Failure analysis; Insulated gate bipolar transistors; Lead; Packaging; Semiconductor devices; Semiconductor materials; Temperature dependence; Thermal degradation; Thermal resistance;
Conference_Titel :
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location :
Bangi
Print_ISBN :
0-7803-4971-7
DOI :
10.1109/SMELEC.1998.781155
