Trap-assisted carrier transport in nanostructures

Dislocations are frequently involved in the growth of nanostructures. On the other hand, dislocations itself are one-dimensional nanostructures with diameters of about 1 nm. The present paper deals with electronic properties of dislocations. In contrast to previous studies, only a few dislocations are measured which excludes interaction with other defects. The characterization of MOSFETs with defined numbers of dislocations proved an increase of the drain current and refers to the presence of electrons on the dislocation core. The number of electrons per dislocation length was extracted from device simulations. Measurements on TFETs refer to trap-assisted tunneling of carriers via dislocations.