• DocumentCode
    3015420
  • Title

    Effects of the operating conditions on the performance of IMPATT amplifiers

  • Author

    El-Badaway, E.-S.A. ; Ibrahim, Said H. ; El-Motaafy, H.A.

  • Author_Institution
    ECED, Malaysia Int´´l Islamic Univ., Kuala Lumpur, Malaysia
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    91
  • Lastpage
    96
  • Abstract
    The purpose of this paper is to shed further light on the effects of the operating conditions, such as the operating frequency and the DC-bias current, on the performance of IMPATT amplifiers. It is shown that the characteristics of the IMPATT amplifier depend strongly on the characteristics of the IMPATT diode. It is found that increasing the frequency reduces the bunching and acceleration, and the premature collection of the avalanche-generated pulse. This is attributed to the decrease of the space charge effect and the depletion layer width modulation effect with increasing frequency. It is also concluded that by increasing the DC-bias current, the bunching and acceleration of the avalanche generated pulse increases, while the premature collection of the pulse decreases. This improves the IMPATT amplifier performance. Optimization of the amplifier gain and its dependence on the operating conditions are introduced and discussed
  • Keywords
    IMPATT amplifiers; avalanche breakdown; circuit testing; electric current; microwave power amplifiers; space charge; DC-bias current; IMPATT amplifier characteristics; IMPATT amplifier performance; IMPATT amplifiers; IMPATT diode characteristics; acceleration; amplifier gain optimization; bunching; depletion layer width modulation effect; operating conditions; operating frequency; premature avalanche-generated pulse collection; space charge effect; Acceleration; Diodes; Doping; Frequency; Indium phosphide; Optical amplifiers; Power amplifiers; Power generation; Pulse amplifiers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
  • Conference_Location
    Bangi
  • Print_ISBN
    0-7803-4971-7
  • Type

    conf

  • DOI
    10.1109/SMELEC.1998.781156
  • Filename
    781156